Factory Lead Time  

14 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Weight  

3.949996g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

375W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

6V 10V

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Turn Off Delay Time  

172 ns

Series  

HEXFET®, StrongIRFET™

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

Published  

2013

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

375W

Case Connection  

DRAIN

Turn On Delay Time  

52 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2m Ω @ 100A, 10V

Vgs(th) (Max) @ Id  

3.7V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

13703pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

411nC @ 10V

Rise Time  

141ns

Vgs (Max)  

±20V

Fall Time (Typ)  

104 ns

Continuous Drain Current (ID)  

195A

Threshold Voltage  

3.7V

Gate to Source Voltage (Vgs)  

3.7V

Drain-source On Resistance-Max  

0.002Ohm

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

760A

RoHS Status  

ROHS3 Compliant

REACH SVHC  

No SVHC

Lead Free  

Lead Free